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CS43L43 UF2001 EHS8B1 FDVE0630 A3195 BCV61 50139 1117B
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1406
DESCRIPTION *With TO-220Fa package *Collector power dissipation :PC=25W@TC=25 *Low collector saturation voltage *Complement to type 2SB1015 APPLICATIONS *For audio frequency power amplifier applications
PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION
*
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 60 7 3 0.5 2.0 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA; IB=0 IC=3A; IB=0.3A IC=0.5A ; VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=0.5A; VCE=5V IE=0 ;f=1MHz ; VCB=10V 60 20 3 70 MIN 60
2SD1406
TYP.
MAX
UNIT V
0.25 0.7
1.0 1.0 100 100 300
V V A A
MHz pF
Switching times ton ts tf Trun-on time Storage time Fall time RL=15;VCC=30V IB1=-IB2=0.2A 0.8 1.5 0.8 s s s
hFE-1 Classifications O 60-120 Y 100-200 GR 150-300
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1406
Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1406
4


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